METHOD FOR PRODUCING CONTACT PAD OF THIN-FILM INTEGRATED CIRCUIT Russian patent published in 2004 - IPC

FIELD: electrical engineering; thin-film microelectronics.

SUBSTANCE: contact pad is made of aluminum with metal sublayer and protective layer. Protective layer is made of tantalum oxide and is produced by applying layer of tantalum having resistivity of 150 -300 Ohm/ѓ onto entire surface of insulating substrate, that is simultaneously onto resistive layer and contact pad produced thereon; then it is fully oxidized for minimum 6 h at temperature not lower than 150°C and not over annealing temperature of resistive layer. Integrated circuit leads are welded to contact pad upon formation of protective layer directly through its surface using ultrasonic welding method.

EFFECT: reduced labor consumption while retaining mechanical and electrical reliability of resistor unit-to-integrated-circuit lead contact.

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