FIELD: microelectronics, particularly, provision of quality and reliability of transistors due to determination of potentially unstable transistors, the invention can be used in the stage of full-scale manufacture of semiconductor products, as well as at the incoming control in manufacture of radio equipment.
SUBSTANCE: the method consists in passing of a series of collector direct current pulses through the device under test and measurement of the electric parameters for compliance with the specifications, it is featured by the fact that the amplitude of the pulse current is preset within 0.9 to 0.95 of the allowable value, pulse time - 1-2 seconds and up to 10 pulses.
EFFECT: reduced time of tests, enhanced efficiency and excluded necessity of comparison with the standard specimen.
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