METHOD FOR DETECTING POTENTIALLY UNRELIABLE BIPOLAR TRANSISTORS Russian patent published in 2007 - IPC G01R31/26 

Abstract RU 2309417 C2

FIELD: micro-electronics, namely, ensuring of reliability of a batch of bipolar transistors due to detection of potentially unreliable devices, possible use during production and during usage.

SUBSTANCE: method for detecting potentially unreliable bipolar transistors includes measuring low frequency noise of transistor, which is performed at two transitions emitter-base, collector-base at two current values, and decision of reliability of devices is made on basis of quality control criterion B, determined as , where I1, I2 - current power values, U2ne1, U2ne2 - square voltage of emitter-base transition noise with current power respectively for first and second values; U2nc2 - square voltage of collector-base transition noise with current power for second value.

EFFECT: increased trustworthiness of method, simplification of method due to measurement of different transitions of one and the same transistor.

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RU 2 309 417 C2

Authors

Gorlov Mitrofan Ivanovich

Zharkikh Aleksandr Petrovich

Shishkin Igor' Alekseevich

Dates

2007-10-27Published

2005-12-01Filed