FIELD: testing and inspecting semiconductor devices.
SUBSTANCE: proposed method designed for grading semiconductor devices by criterion of their potential reliability both in the course of manufacture and during inspection tests at manufacturing plant includes measurement of low-frequency noise of semiconductor devices at two currents. Potential reliability of device is judged by tangent of tilt angle of curve showing noise intensity as function of current for each device found from equation 
Estimate criterion is tgαi ≤ tgαcr for high-reliability transistors and tgαi > tgαcr for lower-reliability transistors. The > tgαcr value is found experimentally in the course of grading devices of each type.
EFFECT: enhanced reliability of measurement results and enlarged functional capabilities.
1 cl, 1 dwg
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