FIELD-EFFECT TRANSISTOR Russian patent published in 2004 - IPC

FIELD: radio engineering; microwave devices and the like. SUBSTANCE: field-effect transistor structure based on Ga and Al nitrides incorporates substrate, Al_yGa_1-yN, insulating layer, channel layer, and Al_xGa_1-xN, barrier layer. Channel layer is made of Al_zGa_1-zN. where 0.12 > x .> 0.03, 1≥y≥x+0,1, being at boundary between channel and insulating layers and 1≥z≥x+0,1, between channel and barrier layers; channel layer thickness ranges between 3 and 20 nm, x, y, and z being molar fractions of Al in AlGaN composition. Insulating layer may be made of two sublayers, lower one adjacent to substrate has y at its boundary with the latter ranging between 0.5 and 0.7 and at its boundary with upper layer, between 0.7 and 1; upper layer has y at its boundary with lower layer ranging between 0.7 and 1 which monotonously reduces to y≤0,4. toward its boundary with channel layer. Barrier and/or insulating layers may have doping δ layer of silicon or oxygen. Field-effect transistor structure may have in addition AlGaON shielding layer covering barrier layer. EFFECT: enhanced degradation stability of device. 4 cl, 4 dwg