SEMICONDUCTOR ELEMENT EMITTING LIGHT IN ULTRAVIOLET RANGE Russian patent published in 2005 - IPC

FIELD: semiconductor emitting devices.

SUBSTANCE: proposed semiconductor element that can be used in light-emitting diodes built around broadband nitride elements of A^IIIB^V type and is characterized in ultraviolet emission range extended to 240 -300 nm has structure incorporating substrate, buffer layer made of nitride material, n contact layer made of Si doped nitride material Al_XIIn_X2Ga_I-XI-X2N, active layer made of nitride material Al_VIIn_Y2Ga_I-YI-Y2N, and p contact layer made of Mg doped nitride material Al_ZIIn_Z2Ga_I-ZI-Z2N; active layer is divided into two areas; area abutting against contact layer is doped with Si and has n polarity of conductivity; other area of active layer is doped with Mg and has p polarity of conductivity; molar fraction of Al (YI) in p area of active layer is continuously and monotonously reducing between its boundary with n contact layer and boundary with p area of contact layer and is within the range of 0.1 ≤ VI ≤ 1; difference in VI values at boundaries of active-layer n area is minimum 0.04 and width of forbidden gap in active-layer p area at its boundary with active-layer n area exceeds by minimum 0.1 eV the maximal width of n area forbidden gap.

EFFECT: enlarged ultraviolet emission range, enhanced inherent emissive efficiency, simplified design of light-emitting component.

1 cl, 1 dwg, 1 tbl