FIELD: application of thin films; forming multi-component stoichiometric film coats; electronic, atomic and other industries.
SUBSTANCE: proposed method consists in presetting some technological parameters: current intensity of magnetron discharge current, areas of target erosion zones and target density whose dependence is determined by properties of materials and stoichiometric coefficients or percentage of film material components at the following ratio: 
, where ρi is density of target material of i-element; Ii is current intensity of discharge of i-magnetron; Si is area of erosion zone of i-target; ai is stoichiometric coefficient of i- element in chemical formula or percentage of i-element in film; Mai is atomic mass of gas ions; Eci is sublimation energy of is atoms of target of i-element; αi is dimensionless parameter of material of target of i-element depending on Ma/Mu; ρ1 is density of target material of base element having minimum density of compact material; S1 is area of erosion zone of base element having minimum density of compact material; a1 is stoichiometric coefficient of base element having minimum density of compact material of chemical formula or percentage of base element having minimum density of compact material in film; Ma1 is atomic mass of target material of base element having minimum density of compact material; Ec1 is sublimation energy of target atoms of base element having minimum density of compact material; α1 is dimensionless parameter of base element target material having minimum density of compact material depending on Ma/Mu. Then, magnetron spraying of opposite targets is performed and sprayed material is directed to mixing zone by at least two counter flows of sprayed material. Each counter flow is directed away from substrate for forming resultant flow. Substrate is shifted relative to resultant flow and sprayed material is settled on substrate.
EFFECT: enhanced efficiency.
2 dwg, 4 tbl, 2 ex
