FIELD: metallurgy.
SUBSTANCE: procedure consists in ion-plasma sputtering target made of complex oxides of ferroelectric and in application of its atoms on substrate arranged on anode. Also, a cylinder screen made of dielectric material is set between the substrate and target. A sputtered target can be made of BaxSr1-xTiO3 or PbZrxTi1-xO3.
EFFECT: expanded range of deviation of stoichiometric composition of produced films from stoichiometric composition of sputtered target.
3 cl, 4 dwg
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