FIELD: semiconductor device manufacturing technology.
SUBSTANCE: double-layer insulating system is produced from silicon dioxide films, (0.05 - 0.09)μm thick, and silicon nitride, (0.04-0.08) μm thick, on silicon semiconductor substrate. Semiconductor device produced in the process is characterized in enhanced mobility and manufacturability.
EFFECT: reduced amount of flaws, enhanced yield.
1 cl, 1 tbl
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RU2330349C1 |
