MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Russian patent published in 2014 - IPC H01L21/336 

FIELD: electricity.

SUBSTANCE: in a manufacturing method of a semiconductor device the gating electrode is formed by in-series application on top of the gate oxide layer of a multi-layer structure consisting of a polysilicone layer, a silicium nitride layer through which electrons may tunnel, a molybdenum layer and the second layer of silicium nitride.

EFFECT: reduced resistance of the gating electrode, provision of manufacturability, improvement of parameters, increase in reliability and percentage yield of serviceable devices.

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