METHOD FOR MANUFACTURING A SEMICONDUCTOR APPARATUS Russian patent published in 2021 - IPC H01L21/265 

FIELD: semiconductors.

SUBSTANCE: invention relates to the field of technology for manufacturing semiconductor apparatuses, in particular, to a technology for manufacturing silicon dioxide with reduced leak currents. Proposed is a method fir manufacturing a semiconductor apparatus, including the processes of forming active areas of the apparatus, gate oxide on a semiconductor substrate, characterised by the fact that the gate oxide is formed by deposition of a SiO₂ film from the plasma at the ratio of the concentration of N₂O/SiH₄ of 11 and velocity of the gas flow of 3 dm³/min, at a rate of deposition of SiO₂ films of 0.5 nm/s and a temperature of 200°C and the HF power of 20 W, followed by annealing at a temperature of 300°C for 60 minutes.

EFFECT: reducing the leak current, ensuring manufacturability, improving the structural parameters, increasing the quality and raising the percentage of the product yield.

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