METHOD OF THIN FILM TRANSISTOR MANUFACTURING Russian patent published in 2014 - IPC H01L21/336 B82B3/00 

FIELD: electricity.

SUBSTANCE: method of thin film transistor manufacturing involves heavy-doped monocrystalline silicon plates of n⁺ conductivity type as a substrate, silicon dioxide layer of 110 nm thickness grown by thermal oxidation in dry oxygen as gate isolator, further forming of amorphous silicon film of 430 nm thickness in HF glow discharge in silane at substrate temperature of 250°C and implanting fluorine ions with 25 keV energy and 10¹⁴-5·10¹⁵ cm^-2 dose rate. After implanting, samples are annealed in nitrogen medium at 200-220°C for 60 minutes, passivating silicon oxide layer of 150 nm is applied in SiH₄ and N₂O plasma mix, and phosphorus ions with 30 keV energy and 10¹⁶ cm^-2 dose rate are implanted to form thin amorphous silicon layer of n⁺ type.

EFFECT: reduced flaw density, improved fabricability, instrument parameters and quality, increased percentage yield of serviceable devices.

1 tbl