FIELD: semiconductor device manufacturing technology.
SUBSTANCE: proposed method for manufacturing semiconductor devices includes formation of silicon dioxide film , 0.2 to 0.4 μm thick, at temperature of 700 to 1080 °C and deposition rate of 0.03 μm/min on insulating substrate surface prior to epitaxial growth of semiconductor silicon film thereon.
EFFECT: reduced current leakage, facilitated manufacture, improved characteristics, enhanced reliability and yield.
1 cl, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR SEMICONDUCTOR DEVICE MANUFACTURE | 2015 |
|
RU2621370C2 |
| MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE | 2016 |
|
RU2644627C2 |
| METHOD FOR MANUFACTURE OF SEMICONDUCTOR INSTRUMENT | 2007 |
|
RU2356125C2 |
| SEMICONDUCTOR DEVICE MANUFACTURING PROCESS | 2005 |
|
RU2302055C1 |
| METHOD OF SEMICONDUCTOR DEVICE MANUFACTURING | 2016 |
|
RU2629657C2 |
| METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE | 2009 |
|
RU2431904C2 |
| METHOD OF CONTACT-BARRIER METALLIZATION PRODUCTION | 2018 |
|
RU2698540C1 |
| METHOD FOR ENHANCING RADIATION STABILITY OF SEMICONDUCTOR DEVICES | 2006 |
|
RU2308785C1 |
| METHOD OF SEMICONDUCTOR INSTRUMENT MANUFACTURE | 2006 |
|
RU2340038C2 |
| SEMICONDUCTOR DEVICE MANUFACTURING METHOD | 2019 |
|
RU2717144C1 |
