METHOD FOR MAKING SEMICONDUCTOR DEVICE Russian patent published in 2019 - IPC H01L21/322 

FIELD: electrical engineering.

SUBSTANCE: invention relates to the field of manufacturing technology of semiconductor devices, in particular, to the technology of manufacturing semiconductor structures with reduced leakage currents. Method of manufacturing a semiconductor device is proposed by forming on the back side of a substrate a silicon nitride film 0.4 mcm thick using RF cathode sputtering at a speed of 10 nm/min at 300 °C with subsequent heat treatment in a nitrogen atmosphere with the addition of 1 % oxygen at a temperature of 1,000–1,200 °C for 1–4 hours.

EFFECT: reduction of leakage currents in semiconductor structures, ensuring manufacturability, improving parameters, improving quality and increasing the percentage of usable devices.

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