FIELD: physics.
SUBSTANCE: before silicon film epitaxial growth stage a sapphire substrate is processed with oxygen ions in amount of 5·1012-1·1013 cm-2 with energy 15-30 keV, and further is annealed at the temperature of 300°C for 35 seconds.
EFFECT: lower flaw density in semiconductor instruments, allowing improvement of processibility, parametres, reliability and yield ratio.
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