METHOD FOR SEMICONDUCTOR DEVICE MANUFACTURE Russian patent published in 2017 - IPC H01L21/263 

FIELD: chemistry.

SUBSTANCE: method for semiconductor device manufacture includes deposition and photolithography of a semiconductor layer on a germanium based, 0.2-0.3 microns thick, at a pressure (1.3-2.7)⋅10^-5 Pa, at a deposition rate of 30 A⁰/s, followed by exposure to an electronic beam with an electron energy of 25 keV and heat treatment at a temperature of 300-400°C for 15-30 s.

EFFECT: reduced defect density, which improves processability, improves good instruments yield, improves their quality and reliability.

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