METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES Russian patent published in 2008 - IPC H01L21/78 

FIELD: measurement technology; producing sensing components for pressure transducers.

SUBSTANCE: proposed method for manufacturing semiconductor devices includes creation of regions with semiconductor device layout components on one end of silicon wafer and division of wafer into chips; prior to do so, wafer is thinned by way of etching. Pending etching shielding mask is formed on wafer underside to provide for shielding peripheral regions of wafer so that internal configuration of mask peripheral area coincides with external configuration peripheral area of structures on wafer face. Protective metal coating is formed on wafer face prior to its division with windows disposed above respective lines dividing wafer into chips including lateral etching; shielding mask is formed on underside of wafer to provide for additional protection of wafer internal regions so that mask configuration departs from location regions of semiconductor layout components.

EFFECT: facilitated manufacture, enhanced yield and metrological characteristics of chips.

1 cl, 5 dwg