FIELD: electronic engineering; gallium arsenide based device manufacture.
SUBSTANCE: proposed method for manufacturing GsAs based devices includes formation of contacts, photolithography, wafer scribing into separate chips, and thermocompression assembly in package. Assembled package is irradiated with protons at energy ranging between 10 and 60 MeV, radiation dose being chosen between 1 x 105 (GaAs) and 1 x 106 rad (GaAs).
EFFECT: reduced process waste, enhanced efficiency of manufacturing desired-parameter deices.
1 cl, 2 dwg
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