FIELD: electronic engineering; gallium arsenide based semiconductor device manufacture.
SUBSTANCE: proposed method for manufacturing gallium arsenide based devices includes formation of contacts, photolithography, wafer scribing into separate chips, and thermocompression assembly in package followed by irradiation with protons at energy ranging between 10 and 60 MeV; for the process irradiation dose is chosen between 1 x 105 rd (GsAs) and 1 x 106 rd (GaAs); upon irradiation wafers are aged with power supplied continuously at temperature of 85±5 °C for 10-24 h.
EFFECT: reduced process rejection rate, enhanced efficiency of producing devices with desired characteristics.
1 cl, 2 dwg
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