FIELD: electronic engineering; gallium arsenide based semiconductor device manufacture.
SUBSTANCE: proposed method for producing GaAs based devices includes formation of contacts, photolithography, wafer scribing into separate chips, and thermocompression assembly into package followed by irradiation with protons at energy ranging between 10 and 60 MeV, irradiation dose being chosen between 1 x 105 rd (GsAs) and 1 x 106 rd (GaAs), and they are heat treatment at temperature of 200±20 °C for 30-60 minutes.
EFFECT: reduced process rejection rate, enhanced effectiveness of producing devices with desired characteristics.
1 cl, 2 dwg
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