LIGHT-EMITTING DIODE Russian patent published in 2004 - IPC

FIELD: semiconductor-emitting devices.

SUBSTANCE: light-emitting diode includes substrate, epitaxial heterostructure based on solid solutions of nitrides of metals of third group with p-n junction formed by sequence of epitaxial layers of n and p types of conductivity as well as metal contacts placed on side of epitaxial layers. At least one metal contact is located on outer surface of epitaxial layers. Substrate is fabricated of monocrystal of nitride of metal of third group mesa is formed in epitaxial layers on side of outer surface which groove is pickled to depth exceeding depth of laying of p-n junctions and divides mesa into two regions. One metal contact is located on outer surface of one region of mesa, another metal contact is positioned on outer surface of another region of mesa and is lowered along side wall of groove to its bottom.

EFFECT: enhanced quantum efficiency of AlGaInN light-emitting diode, its simplified hookup on commutation panel.

7 cl, 7 dwg