FIELD: manufacturing technology.
SUBSTANCE: invention relates to the technology of manufacturing semiconductor two-spectral hybridized assemblies and can be used to create matrix photodetectors (MPD) for various purposes. For the implementation of TTS PSA produce hybridization M×K LSI readings and matrix photosensitive elements (MPSE) and thinning assembly M×K MPSE as a whole with preliminary formation on the front side of the assembly of M×K MPSE grooves of a certain depth. In this case, the separation of the assembly into individual crystals of MPSE occurs through chemical-dynamic thinning to the level of the groove. Further, in one of the manufacturing methods, TTS PSA successively hybridize and disassemble a set of temporary masks (near the surface of the MPSE) using In microcontacts on the assembly M×K LSI readings for spraying through them two multilayer interference filters.
EFFECT: invention solves the problem of manufacturing a thinned two-spectral photosensitive assembly (TTS PSA) with reduced weight and size characteristics.
7 cl, 5 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR GROUP PRODUCTION OF THINNED HYBRIDIZED ASSEMBLIES FOR MATRIX PHOTODETECTOR | 2023 |
|
RU2811380C1 |
| TWO-SPECTRAL MATRIX PHOTO DETECTOR MANUFACTURING METHOD | 2018 |
|
RU2678519C1 |
| METHOD OF MAKING PHOTODETECTOR ARRAY | 2014 |
|
RU2573714C1 |
| METHOD FOR MANUFACTURING THINNED MULTI-ELEMENT PHOTODETECTOR BASED ON INDIUM ANTIMONIDE WITH IMPROVED UNIFORMITY AND INCREASED MECHANICAL STRENGTH | 2023 |
|
RU2811379C1 |
| METHOD FOR MANUFACTURE OF ARRAY PHOTODETECTOR | 2019 |
|
RU2749957C2 |
| METHOD OF THINNING PHOTOSENSITIVE LAYER OF MATRIX PHOTODETECTOR | 2013 |
|
RU2536328C2 |
| METHOD OF ASSEMBLING INFRARED PHOTODETECTOR | 2013 |
|
RU2526489C1 |
| METHOD FOR MANUFACTURING INDIUM MICROCONTACTS | 2014 |
|
RU2571436C1 |
| METHOD OF MAKING INDIUM MICROCONTACTS BY ION ETCHING | 2012 |
|
RU2492545C1 |
| METHOD OF MAKING PHOTODETECTOR ARRAY | 2012 |
|
RU2522681C2 |
