SEPARATE-CONFINEMENT LASER HETERO-STRUCTURE Russian patent published in 2023 - IPC H01S5/323 

FIELD: semiconductor technology.

SUBSTANCE: invention relates to semiconductor technology, to planar laser heterostructures. The separate-confinement laser hetero-structure grown on a GaAs substrate of n-conductivity includes a quantum-dimensional active region, waveguide layers made of a solid solution of Al_xGa_1-xAs, emitter layers of n-conductivity and p-conductivity adjacent to the waveguide layers and made of a solid solution of Al_x⋅ Ga_1-x⋅ As. The heterostructure is provided with contact layers of n-conductivity and p-conductivity adjacent to the corresponding emitter layers of n-conductivity and p-conductivity, the waveguide layers contact directly with the quantum-dimensional active region and the emitter layers of n-conductivity and p-conductivity and are made of different thickness and are 2u and y, respectively, where y is within from 0.75 to 0.85 microns, the molar fraction of aluminum x solid solution Al_xGa_1-xAs in waveguide layers at the boundaries with emitter layers is 0.8xʹ and linearly decreases to 0.5xʹ at the boundaries with the quantum-dimensional active region, and in emitter layers the molar fraction of aluminum xʹ solid solution Al_x⋅ Ga_1-x⋅ As is in the range from 0.4 to 0.45.

EFFECT: present invention enables to improve the design of the laser heterostructure, to create an additional optical confinement between the emitter and waveguide layers.

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