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2 324 259

(13)

(51)

IPC

H01L31/102(2006-01-01)

(21) (22)

Application

2006137783/28, 2006-10-26

(24)

Start date

2006-10-26

(22)

Actual filing date

2006-10-26

(45)

Published

2008-05-10

(72)

Inventor

Astakhov Vladimir PetrovichGindin Pavel DmitrievichEzhov Viktor PetrovichKarpov Vladimir VladimirovichSolov'Eva Galina Sergeevna

(73)

Holder

Otkrytoe Aktsionernoe Obshchestvo Zavod

INDIUM ANTIMONIDE PHOTODIODE Russian patent published in 2008 - IPC H01L31/102

Abstract RU 2324259 C1

FIELD: electronics; semiconductor devices.

SUBSTANCE: indium antimonide photodiode includes n-type indium antimonide substrate with р-n junction formed in it, protective and passivating dielectric films, and contact system. Doping concentration in the substrate is 10¹⁶-3·10¹⁶ cm^-3 The invention provides for increase of limit operating temperature of photodiode while keeping unchanged its threshold parameters, which makes considerably lower requirements to photodiode cooling system.

EFFECT: reduction of power consumption and improvement of weight and size parameters.

1 tbl, 3 dwg

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RU 2 324 259 C1

Authors

Astakhov Vladimir Petrovich

Gindin Pavel Dmitrievich

Ezhov Viktor Petrovich

Karpov Vladimir Vladimirovich

Solov'Eva Galina Sergeevna

Dates

2008-05-10—Published

2006-10-26—Filed