FIELD: ohmic contacts for microelectronic devices such as microwave field-effect transistors.
SUBSTANCE: proposed method includes production of vacuum in vacuum chamber, sequential electron-beam evaporation of Ti, Al, Ni, and Au in vacuum chamber onto section of AlGaN layer surface, and high-temperature annealing; prior to Ti, Al, Ni, Au evaporation Ti is sprayed in vacuum chamber to form 2-3 Ti monolayer on surfaces of elements disposed within vacuum chamber; Ti, Al, Ni, Au are evaporated onto section of AlGaN layer surface at vacuum of 1 x 10-7 to 1 x 10-8 mm Hg.
EFFECT: reduced contact resistance of ohmic contacts due to reduced amount of residual oxygen and water vapors in vacuum chamber.
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