POWERFUL MICROWAVE FIELD-EFFECT TRANSISTOR BASED ON SEMICONDUCTOR HETEROSTRUCTURE Russian patent published in 2024 - IPC H01L29/80 

FIELD: microwave equipment.

SUBSTANCE: development and production of a wide range of microwave electronic devices. In the semiconductor heterostructure of a powerful microwave field-effect transistor, at least two quantum barrier layers of i-AlAs are additionally made, each with a thickness of 2-6 atomic monolayers, each of the mentioned quantum barrier layers is made in part of the semiconductor heterostructure - between a layer doped with an acceptor impurity (p) of a group of Al_xGa_1-xAs barrier layers and the actual channel layer In_yGa_1-yAs, or a group of layers of the latter with different mole fractions (y) of the chemical element indium (In_y), quantum barrier layers are separated from each other by at least one layer of narrow-gap material Al_xGa_1-As, each with a mole fraction (x) of the chemical element Al_x less than 0.4, with a thickness equal to or more than 2 atomic monolayers.

EFFECT: providing the ability to increase the output power and gain of a high-power microwave field-effect transistor based on a semiconductor heterostructure.

4 cl, 2 dwg, 1 tbl