POWERFUL UHF FIELD TRANSISTOR WITH A SEMICONDUCTOR HETEROSTRUCTURE Russian patent published in 2023 - IPC H01L29/80 H01L29/786 B82Y40/00 

FIELD: semiconductors.

SUBSTANCE: according to the invention, a high-power microwave field-effect transistor with a semiconductor heterostructure comprises a semiconductor substrate, a buffer layer, a sequence of layers of wide-gap and a layer of narrow-gap materials of the AlGaAs-InGaAs-GaAs type with specified characteristics, whereas the groups of conductive layers that form the channel comprise at least one layer In_уGa_1-уAs with different values of y of the chemical element, at least two doped with a donor impurity δ of the n-layer, at least two spacer i-layers located in pairs on both sides of the channel layer, two groups of barrier layers Al_хGa_1-хAs, each in the form of a system of barrier layers, one of which is located on one side of the group of conductive layers above the substrate (the substrate group), the other on the opposite side (the gate group), whereas the substrate is made in the form of an acceptor-donor system of barrier layers Al_хGa_1-хAs, the source, gate, drain electrodes are located on the outer surface of the semiconductor heterostructure. The gate group of barrier layers is made in the form of a donor-acceptor system of barrier layers Al_хGa_1-хAs or an unalloyed system of barrier layers Al_хGa_1-хAs, the substrate and gate groups of barrier layers of the semiconductor heterostructure additionally comprise at least two barrier layers i-AlAs with a thickness of 2-6 atomic monolayers each, whereas in each mentioned group of barrier layers, which are separated from each other by a layer of narrow-gap material Al_хGa_1-хAs with a mole fraction x of the chemical element Al less than 0.4, with a thickness of more than 3 atomic monolayers.

EFFECT: increased gain while maintaining the output power.

1 cl, 2 dwg