HIGH-POTENTIAL SEMICONDUCTOR VOLTAGE LIMITER (ALTERNATIVES) Russian patent published in 2008 - IPC H01L29/861 

FIELD: semiconductor voltage limiters; surge protection of electronic devices and manufacture of mentioned devices.

SUBSTANCE: proposed high-voltage semiconductor potential limiter affords breakdown voltage of 40 to 40 000 V at reverse current of 10 to 10 000 A and has silicon substrate carrying at least one substrate-insulating layer and 0.1 - 10 μm thick layer of silicon-containing polycrystalline material, both sequentially formed on its surface; polycrystalline layer has alternating series-interconnected p-n⁺-p-n⁺ through p or n⁺-p- n⁺ through p, or p-n⁺ through p-n⁺ regions obtained by doping mentioned layer throughout entire thickness to dope concentration of minimum 1 x 10¹⁶ and 5 x 10¹⁶ cm^-3, respectively, in p and n⁺ regions; contacts are connected to extreme regions of limiter. Two alternatives of claimed invention are proposed.

EFFECT: ability of dispensing with expensive monocrystalline materials, facilitated manufacture.

9 cl, 4 dwg