FIELD: semiconductor engineering; molecular-beam epitaxy. SUBSTANCE: plates are treated with etching of the following composition, mass parts: aqueous ammonia (25%)-1; hydrogen peroxide (30%) - 1.5-2.8; water - 5.45-1.09. For better cleaning, sodium chloride is introduced in addition in the amount of 0.0218-0.0981 mass parts. Treatment procedure lasts 15-20 min. Then plates are rinsed in deionized water, etched in concentrated aqueous ammonia, rinsed once more, and dried out. Carbon pollutants level on surface is not over 3.0 at.%. EFFECT: improved quality of gallium arsenide plate surface due to reduced level of carbon pollutants.
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