APPLICATION OF VACUUM DEPOSIT GERMANIUM FROM THE GERMAN GAS MEDIUM AS A METHOD OF REMOVING SILICON DIOXIDE FROM THE WORKING SURFACE OF THE SILICON COVER AND METHOD OF MANUFACTURING A GERMANIUM MONOCRYSTALLINE FILM ON THE SILICON SUPPORT INCLUDING THE USED APPLICATION Russian patent published in 2017 - IPC H01L21/205 

FIELD: chemistry.

SUBSTANCE: group of inventions refers to the technology of vacuum epitaxy of germanium or germanium and silicon, including the use of vacuum deposition of germanium from the germanium gas medium as a method for removing a naturally formed or formed protective layer of silicon dioxide from the working surface of a chemically purified silicon substrate in the stage of its preparatory vacuum purification before vacuum deposition of germanium or germanium and silicon onto mentioned substrate to produce an appropriate epitaxial film. To achieve the results, the use of vacuum deposition of germanium of the gaseous medium germane by pyrolysis of the latter in the presence of a source of heat for mentioned pyrolysis in the form of a resistive heating element made of refractory metal and disposed over the heated chemically cleaned silicon substrate is proposed, as a method of removing silicon dioxide from the work surface of mentioned substrate in terms of its heating to a temperature above the process temperature of the substrate supporting the during subsequent vacuum epitaxy semiconductor material on the basis of germanium in an amount selected depending on the degree of availability of silica in the working surface of the silicon substrate is chemically purified.

EFFECT: efficiency preparatory vacuum cleaning the working surface of the silicon substrate by providing a high degree of removal of silica while increasing manufacturability of compatibility of mentioned removal followed by vacuum epitaxy, expanding current technological armory vacuum epitaxy satisfying the increasing requirements of high-quality semiconductor manufacture, improvement of quality of the obtained single-crystal film of germanium by high-tech preparatory of vacuum cleaning of the working surface of the silicon substrate before forming the mentioned film.

4 cl, 1 dwg