METHOD OF PRODUCING SILICON NITRIDE Russian patent published in 2017 - IPC H01L21/318 

FIELD: chemistry.

SUBSTANCE: in the way of silicon nitride production, silicon nitride is formed by catalyst chemical vapour phase deposition form mixtures of hydrazine (N₂H₄) and silane (SiH₄) at the temperature of the substrate 230-370°C pressure SiH₄ 15-17.5 Pa, Silicon nitride growth rate 100 nm/min and the partial pressures of the gaseous sources P(N₂H₄+N₂)/P(SiH₄)=4-6.

EFFECT: increasing the breakdown voltage, providing processability, improving the parameters of structures, improving quality and increasing the yield percentage.

1 tbl