NITRIDE SEMICONDUTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT Russian patent published in 2018 - IPC H01L33/16 H01L33/22 H01L33/32 

FIELD: electrical engineering.

SUBSTANCE: ultraviolet light-emitting nitride semiconductor element contains a subsurface part comprising a substrate, which consists of sapphire and has a surface inclined to surface (0001) so that a multistage terrace is formed, an AlN layer formed on the surface of this substrate, and a light-emitting part, which is formed on the surface of the sublayer part, and includes an active layer having an AlGaN-based semiconductor layer. At least, the AlN layer of the sublayer part, the active layer of the light emitting part and each layer between the AlN layer and the active layer are formed by stepwise layer growth, wherein the lateral surface of the multistage terrace grows so that two-dimensional growth is achieved. Active layer has a quantum well structure that includes at least a pit layer consisting of AlGaN. Average roughness of the region of 25 mcm to 25 mcm on the surface of the active layer is from the thickness of the core layer or more to 10 nm or less.

EFFECT: invention provides the possibility of creating a UV emitting nitride semiconductor element, which includes an active layer with a high light output.

9 cl, 18 dwg