MAGNETIC FIELD SENSOR Russian patent published in 2008 - IPC G01R33/00 

FIELD: physics.

SUBSTANCE: invention concerns primary field adapters and can be applied in sensor devices for car electronics, automatics and robotics, instrumentation, orientation and navigation systems, safety systems, and environment monitoring. This task is accomplished by magnetic sensor construction on the basis of semiconductor (e.g. Si), consisting of source, channel and two drain areas, and gate insulator on the semiconductor surface under the channel, and gate on the surface of gate insulator. The novelty of the device lies in the use of one additional gate, so that both gates are lodged on gate insulator in line.

EFFECT: higher sensitivity of magnetic field sensors based on double-drain field-effect transistor.

2 dwg