METHOD OF MAKING SEMICONDUCTOR STRUCTURE Russian patent published in 2012 - IPC H01L21/265 

FIELD: physics.

SUBSTANCE: semiconductor structure is formed by doping a silicon substrate with protons, first with a dose of 1·10¹⁵ cm^-2 and energy 100 keV, and then with a dose of 2·10¹⁵ cm^-2 and energy 200 keV, with subsequent annealing at temperature 400-500°C for 20-40 minutes and implantation of nitrogen ions in two steps: with a dose of 2.5·10¹³ cm^-2 and energy 60-100 keV and a dose of 7.5·10¹³ cm^-2 and energy 120-200 keV.

EFFECT: reduced flaw density in semiconductor structures, which improves processability, improved parameters of structures, high quality and high yield ratio.

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