METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE Russian patent published in 2023 - IPC H01L21/463 

FIELD: semiconductors.

SUBSTANCE: technology for the production of semiconductor devices, in particular – the technology for the production of semiconductor structures with a low defect density. The problem is solved by creating a hidden ion-doped layer by implanting As ions with an energy of 50 keV with a dose of 5.5·10¹⁴ cm^-2, annealing at a temperature of 600°C for 60 minutes in dry oxygen, followed by treatment of the back side of the silicon substrate with p-type conductivity, Ar argon ions with an energy of 100 keV, dose (4 – 5)·10¹⁴ cm^-2, annealing at a temperature of 1100°C to 1250°C for 50 min.

EFFECT: reduced defectiveness, manufacturability, improved device parameters, improved quality, and increased percentage of usable products.

1 cl, 1 tbl