FIELD: electricity.
SUBSTANCE: in the method to make a semiconductor device, including process of making a hidden insulating layer of silicon dioxide in a semiconductor silicon substrate, a semiconductor structure after formation of the hidden insulating layer is treated with fluorine ions with a dose of (4-6)·1013 cm-2 with energy of 80-100 keV with subsequent thermal burning at the temperature of 800-1100°C for 30-60 sec.
EFFECT: reduced density of defects, lower leakage currents, provision of manufacturability, improved parameters, higher reliability and increased percentage of good devices yield.
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Authors
Dates
2011-10-20—Published
2009-11-18—Filed