METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE Russian patent published in 2011 - IPC H01L21/265 

Abstract RU 2431904 C2

FIELD: electricity.

SUBSTANCE: in the method to make a semiconductor device, including process of making a hidden insulating layer of silicon dioxide in a semiconductor silicon substrate, a semiconductor structure after formation of the hidden insulating layer is treated with fluorine ions with a dose of (4-6)·1013 cm-2 with energy of 80-100 keV with subsequent thermal burning at the temperature of 800-1100°C for 30-60 sec.

EFFECT: reduced density of defects, lower leakage currents, provision of manufacturability, improved parameters, higher reliability and increased percentage of good devices yield.

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RU 2 431 904 C2

Authors

Mustafaev Abdula Gasanovich

Mustafaev Gasan Abakarovich

Mustafaev Arslan Gasanovich

Dates

2011-10-20Published

2009-11-18Filed