METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE Russian patent published in 2011 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: in the method to make a semiconductor device, including process of making a hidden insulating layer of silicon dioxide in a semiconductor silicon substrate, a semiconductor structure after formation of the hidden insulating layer is treated with fluorine ions with a dose of (4-6)·10¹³ cm^-2 with energy of 80-100 keV with subsequent thermal burning at the temperature of 800-1100°C for 30-60 sec.

EFFECT: reduced density of defects, lower leakage currents, provision of manufacturability, improved parameters, higher reliability and increased percentage of good devices yield.