METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE Russian patent published in 2023 - IPC H01L21/265 H01L21/36 

FIELD: semiconductor.

SUBSTANCE: method for manufacturing semiconductor devices includes doping a GaAs substrate by ion implantation, heat treatment, and forming a GaAs epitaxial layer on the GaAs substrate. According to the invention, the GaAs substrate is doped by implanting tellurium with an energy of 200 keV with a dose of 10^13-10¹⁵ cm^-2 at a substrate temperature of 200°C, then heat treatment is carried out at a temperature of 700°C for 30 min in an argon atmosphere, and formation of a GaAs epitaxial layer on a GaAs substrate is carried out at a deposition rate of 1.5 nm/s with decomposition of Ga(CH₃)₃ at a temperature of 600°C and hydrogen pressure of 76 mm Hg during growth.

EFFECT: reduction in defectiveness, ensuring manufacturability, improving the parameters of devices, improving quality and increasing the percentage of yield.

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