MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Russian patent published in 2013 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: semiconductor device is formed by double implantation to the area of the channel with focused beams of boron ions with a dose of 6·10¹²-6·10¹³ cm^-2 with energy of 20 keV and arcenic ions with energy of 100 keV with a dose of (1 -2)-10 cm^-2 with further annealing at the temperature of 900-1000°C during 5-15 seconds.

EFFECT: reduction of threshold voltage in semiconductor devices; improvement of parameters of devices; improvement of quality and increases of percentage yield.

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