METHOD OF MAKING SEMICONDUCTOR DEVICE Russian patent published in 2010 - IPC H01L21/265 

FIELD: physics, semiconductors.

SUBSTANCE: invention can be used in making semiconductor devices. The method of making a semiconductor device involves treatment of an insulating substrate with oxygen ions, thermal annealing and formation of a silicon semiconductor epitaxial film. After epitaxial growth of the silicon film on the insulating substrate, the silicon film is amorphised with silicon ions in two steps: the first step is carried out at a dose of 10¹⁵ cm^-2 and energy 100-130 keV and the second step at a dose of 2·10¹⁵ cm^-2 and energy 50-70 keV. After each amorphisation step, annealing is done at temperature 950-1100°C for 20-60 minutes in hydrogen. A semiconductor device is then made on the silicon film using standard techniques.

EFFECT: lower flaw density in semiconductor devices, which improves manufacturability, parametres, increases reliability and percentage yield.

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