METHOD OF SEMICONDUCTOR INSTRUMENT MANUFACTURE Russian patent published in 2008 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: in process of semiconductor instrument manufacture silicon dioxide is shaped in silicon wafer by implantation of oxygen ions with subsequent collection of total integral dose 1.5·10¹⁸ cm^-2 in three stages (0.5·10¹⁸+0.5·10¹⁸+0.5·10¹⁸), with energy of 150-200 keV, at the wafer temperature of 550-650°C, every stage includes annealing at the temperature of 1150-1300°C in argon atmosphere with addition of 0.5% of oxygen within 4-6 hours in every stage. Then epitaxial film is grown above silicon layer of requested thickness, and active areas of semiconductor instrument are created.

EFFECT: reduction of defects density in semiconductor instruments that provides manufacturability, improvement of parameters, higher reliability and increase of proper produce output percentage.