METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE Russian patent published in 2023 - IPC H01L21/20 H01L21/331 

FIELD: semiconductors.

SUBSTANCE: invention is related in particular to technology of manufacturing a thin-film transistor with a reduced defectiveness value. Silicon dioxide is formed on a silicon substrate of p-type conductivity, with orientation (100) and a resistivity of 10 Ohm.cm, in a gaseous environment SiH₄-CO₂-HCI-H₂, at a hydrogen flow rate of 110-120 L/min, silane SiH₄ flowrate of 360-500 ml/min, CO₂ to silane SiH₄ flowrate ratio of 15:1, substrate temperature of 850-1050°C, hydrogen chloride consumption of 0.1-1.0%, and silicon dioxide deposition rate of 22 nm/min, and subsequent heat treatment at a temperature of 600°C for 30 minutes, in an argon atmosphere.

EFFECT: growing an oxide layer using hydrogen chloride ensures interaction with free silicon atoms and prevents their introduction into the oxide, thereby reducing defects.

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