METHOD OF SEATING SILICON CHIP ONTO HOUSING BASE Russian patent published in 2009 - IPC H01L21/58 

FIELD: physics; electronics.

SUBSTANCE: invention relates to microelectronics and can be used in making semiconductor devices and integrated circuits. The method of seating a silicon chip onto the base of a housing for a semiconductor device involves successive deposition of metal layers onto the seating surface of the chip and soldering the chip to the base of the housing. Two metals - titanium and germanium are deposited on the seating surface of the chip. The process is carried out in a single fabrication cycle, and the chip is soldered to the base of the housing at temperature ranging from 300 to 320°C.

EFFECT: more reliable contact between the chip and the base of the housing and stability of the soldering process.

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