FIELD: electricity.
SUBSTANCE: in method for formation of contact to silicone transistor collector area during setting of transistor crystal to the base of a semiconductor device package the following two metals are evaporated in the same process to a silicone wafer setting surface: titanium-copper. The wafer is divided into chips and crystals are soldered to the package base at temperature of 250-280°C during 3-5 s.
EFFECT: reduced temperature of crystal setting to the package base, improved reliability of the crystal contact with the package base and usage of inexpensive materials with maintenance of the process stability.
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