FIELD: microelectronics.
SUBSTANCE: four metals are applied sequentially to the back side of a silicon wafer in a single technological cycle: chromium-nickel-tin-silver (Cr-Ni-Sn-Ag), then the wafer is divided into crystals and the crystals are soldered to the base of the case at a temperature of 300°C for 3-5 s.
EFFECT: improved reliability of contact between the crystal and the base of the housing, stability of the connection process.
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