FIELD: physics, semiconductors.
SUBSTANCE: invention is related to microelectronics and may be used in production of semiconductor instruments and integrated circuits. Substance of invention: in method for setting of silicon crystal three metals: chrome-nickel-silver (Cr-Ni-Ag) are serially sprayed on body base in single technological cycle onto setting surface of silicon crystal, and soldering of crystals to body base is carried out at the temperature of 300-320°C for 3-5 seconds.
EFFECT: increased reliability of crystal contact with body base and stability of connection process.
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