FIELD: physics; electricity.
SUBSTANCE: method covers planar n+-region process with protection of n+-p junction periphery surface through nitrogen ion implantation preceded with formation of surface p+-type region of preset width on p-type surface directly surrounding n-p interface with using boron doping dosed (0.8-1)·10 cm2.
EFFECT: improved performance of high-resistivity silicon devices and reduced reverse current at working voltage.
3 cl, 2 dwg, 3 tbl
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