CASE FOR MICROWAVE SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURE Russian patent published in 2009 - IPC H01L23/02 

FIELD: physics.

SUBSTANCE: invention relates to electronics. In the case for the microwave semiconductor device, in which the heat removing base and frame is made monolithically, the latter is in the form of a welt on its perimeter with a thickness of not more than 2.0 mm, ceramic-metal input-output are also made monolithically in the form of a conductor from metal or metallic alloys, which have low electrical resistance, located inside a pipe with an internal cross-section of 0.2-1.0 mm, made from precalcined ceramics, ceramic-metal input-output and correspondingly a through-hole for them in the frame is made with a round cross-section, the size of the section is the length of the ceramic-metal input-output, and also the size of the section of their conductors and the size of their contact areas is determined by set-up parameters semiconductor device, and the contact areas are made on the ends of the ceramic-metal input-output parallel and/or perpendicular to their axes. Also presented is a method of making the case for the microwave semiconductor device.

EFFECT: increase in the reliability and durability, increase in the microwave power output, increase in the technological efficiency and lowering labour input during manufacture, reduction of mass-size characteristics.

7 cl, 1 dwg