HOUSING FOR SEMICONDUCTOR MICROWAVE DEVICE Russian patent published in 2016 - IPC H01L23/02 

FIELD: instrument making.

SUBSTANCE: this invention consists in that case for semiconductor device contains high thermal-and electroconductive base frame along the perimeter of one of the surfaces high thermal-and electroconductive base with through holes for cermet inputs/outputs, at least one metal contact platform on said surface high thermal-and electroconductive base for location and subsequent connection to it at least one crystal of semiconductor device at least two cermet input/output, one contact sites which protrude inside, and the other-through holes in the frame out of the housing, the high thermal-and electroconductive base, frame, ceramic-metal inputs/outputs are connected by soldering, high thermal-and electroconductive base is made from composite material, wherein at least two components-highly heat-conducting ceramic and electroconductive at their ratio, wt%, (90-70):(10-30) respectively thermal linear expansion coefficients, which provide matching with thermal coefficient of linear expansion of crystal semiconductor device.

EFFECT: reducing weight and dimensions, improving manufacturability and easier manufacture while maintaining reliability, durability, output power semiconductor microwave device.

4 cl, 1 tbl, 1 dwg