FIELD: physics, semiconductors.
SUBSTANCE: invention relates to micro- and nanotechnology and can be used for non-destructive inspection of integrated circuit topologies. The method of inspecting integrated circuits (IC) involves creation of its physical model in a "silicon-on-insulator" semiconductor structure, the back surface of which is transparent for infrared radiation with subsequent inspection of the topology of the IC from the back surface of the "silicon-on-insulator" semiconductor structure in the infrared band from 940 to 1050 nm under a microscope fitted with a photodetector based on a CCD matrix. A model connected to an electric power supply can also be inspected.
EFFECT: increased information content of non-destructive inspection of ICs.
2 cl, 3 dwg, 1 ex
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