METHOD FOR OBTAINING COMPOSITE TARGET FOR SPUTTERING FROM TUNGSTEN-TITANIUM-SILICON ALLOY Russian patent published in 2012 - IPC C23C14/35 C22C14/00 C22C27/04 H01J23/00 

FIELD: metallurgy.

SUBSTANCE: manufacturing method of composite target for obtaining films by magnetron sputtering and target obtained using the above method is proposed. Method involves manufacture of disc from polycrystalline titanium ingot obtained by multiple vacuum titanium re-melting, drilling of holes in staggered order in sputtered zone of titanium disc along two concentric circles and fixture of cylindrical inserts in them. Cylindrical inserts are made by cutting of ingots of monocrystalline tungsten and monocrystalline silicon, which have been obtained by multiple vacuum remelting of tungsten and silicon. Inserts attachment is performed by press fitting to drilled holes at the ratio of surface areas occupied with tungsten and silicon inserts on surface of target in titanium disc providing the production of films consisting of the following, wt %: silicon 0.1-1.3, titanium 11-33, and tungsten is the rest.

EFFECT: increasing thermal stability of metal coating and reproducibility of its formation process.

2 cl, 1 tbl, 1 ex